Panasonic MAS3795E User manual

Schottky Barrier Diodes (SBD)

Publication date: June 2002 SKH00118AED

MAS3795E

Silicon epitaxial planar type

For high-speed switching circuits

■Features

•High-density mounting is possible

•Optimum for high frequency rectification because of its short

reverse recovery time (trr)

•Low forward voltage VFoptimum for low voltage rectification

VF=<0.3 V (at IF=1 mA)

•SSS-Mini type 3-pin package

■Absolute Maximum Ratings Ta=25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) VR30 V

Peak reverse voltage VRM 30 V

Forward current (DC)

Single IF30 mA

Double 20

Peak forward current

Single IFM 150 mA

Double 110

Junction temperature Tj125 °C

Storage temperature Tstg −55 to +125 °C

■Electrical Characteristics Ta=25°C ±3°C

Internal Connection

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) IRVR=30 V 30 µA

Forward voltage (DC) VF1 IF=1 mA 0.3 V

VF2 IF=30 mA 1.0

Terminal capacitance CtVR=1 V, f =1 MHz 1.5 pF

Reverse recovery time *trr IF=IR=10 mA 1.0 ns

Irr =1 mA, RL=100 Ω

Detection efficiency ηVin =3 V(peak) , f =30 MHz 65 %

RL=3.9 kΩ, CL=10 pF

Bias Application Unit N-50BU

90%

Pulse Generator

(PG-10N)

= 50 Ω

Wave Form Analyzer

(SAS-8130)

= 50 Ω

= 2 µs

= 0.35 ns

δ = 0.05

=10 mA

=100 Ω

10%

Input Pulse Output Pulse

=1 mA

Unit: mm

1.20±0.05

0.52±0.03

0 to 0.01

0.15 max.

5°

0.15 min.

0.80±0.050.15 min.

0.33

(0.40)(0.40)

5°

0.80±0.05

1.20±0.05

+0.05

–0.02 0.10+0.05

–0.02

0.23+0.05

–0.02

Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

2. Rated input/output frequency: 2 GHz 3. *: trr measuring instrument

1: Anode 1

2: Anode 2

3: Cathode 1, 2

SSSMini3-F1 Package

Marking Symbol: M3

This product complies with the RoHS Directive (EU 2002/95/EC).

MAS3795E

SKH00118AED

−2

0 0.4 0.8 1.2 1.6 2.0 2.4

−1

Forward voltage VF(V)

Forward current IF(mA)

=125°C–20°C

75°C 25°C

−1

0 5 10 15 20 25 30

Reverse voltage V

(V)

Reverse current I

(µA)

=125°C

75°C

25°C

0.2

0.4

0.6

0.8

1.0

−40 0 40 80 120 160 200

Ambient temperature Ta(°C)

Forward voltage V

(V)

=30 mA

10 mA

1 mA

−1

−40 0 40 80 120 160 200

Ambient temperature Ta(°C)

Reverse current IR(µA)

=25 V

3 V

1 V

3.0

2.5

2.0

1.5

1.0

0.5

0 5 10 15 20 25 30

Reverse voltage V

(V)

Terminal capacitance C

(pF)

f =1 MHz

Ta=25°C

IRTaCtVR

IFVFIRVRVFTa

This product complies with the RoHS Directive (EU 2002/95/EC).

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products, and no license is granted under any intellectual property right or other right owned by our company or any other

company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other

company which may arise as a result of the use of technical information described in this book.

(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office

equipment, communications equipment, measuring instruments and household appliances).

Consult our sales staff in advance for information on the following applications:

–Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support

systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-

ucts may directly jeopardize life or harm the human body.

–Any applications other than the standard applications intended.

(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita

Electric Industrial Co., Ltd.

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