Panasonic 2SC2295 User manual

Transistors

Publication date: March 2003 SJC00112BED

2SC2295

Silicon NPN epitaxial planar type

For high-frequency amplification

Complementary to 2SA1022

■Features

•Optimum for RF amplification of FM/AM radios

•High transition frequency fT

•Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing

■Absolute Maximum Ratings Ta=25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) VCBO 30 V

Collector-emitter voltage (Base open) VCEO 20 V

Emitter-base voltage (Collector open) VEBO 5V

Collector current IC30 mA

Collector power dissipation PC200 mW

Junction temperature Tj150 °C

Storage temperature Tstg −55 to +150 °C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base cutoff current (Emitter open)

ICBO VCB =10 V, IE=0 0.1 µA

Forward current transfer ratio *hFE VCB =10 V, IE=−1 mA 70 220 

Transition frequency fTVCB =10 V, IE=−1 mA, f =200 MHz 150 250 MHz

Noise figure NF VCB =10 V, IE=−1 mA, f =5 MHz 2.8 4.0 dB

Reverse transfer impedance Zrb VCB =10 V, IE=−1 mA, f =2 MHz 22 50 Ω

Reverse transfer capacitance Cre VCB =10 V, IE=−1 mA, f =10.7 MHz 0.9 1.5 pF

(Common emitter)

Unit: mm

■Electrical Characteristics Ta=25°C ±3°C

1: Base

2: Emitter

3: Collector

EIAJ: SC-59

Mini3-G1 Package

0.40+0.10

–0.05

(0.65) 1.50+0.25

–0.05

2.8+0.2

–0.3

(0.95) (0.95)

1.9±0.1

2.90+0.20

–0.05

0.16+0.10

–0.06

0.4±0.2

5˚

10˚

0 to 0.1 1.1+0.2

–0.1

1.1+0.3

–0.1

Marking Symbol: V

Rank B C

hFE 70 to 140 110 to 220

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC2295

2SJC00112BED

IBVBE ICVBE VCE(sat) IC

PCTaICVCE ICIB

hFE ICfTIEZrb IE

0 16040 12080

240

200

160

120

Collector power dissipation P

(mW)

Ambient temperature T

(°C)

018612

=25°C

=100 µA

80 µA

60 µA

40 µA

20 µA

Collector current I

(mA)

Collector-emitter voltage V

(V)

0 1008020 6040

15.0

12.5

10.0

7.5

5.0

2.5

=10 V

=25°C

Base current IB(µA)

Collector current I

(mA)

0 1.00.80.2 0.60.4

120

100

VCE =10 V

Ta=25°C

Base-emitter voltage VBE (V)

Base current IB(µA)

0 2.01.60.4 1.20.8

=10 V

=75°C−25°C

25°C

Base-emitter voltage VBE (V)

Collector current IC(mA)

0.1 1 10 100

0.01

0.1

100 I

/ I

=10

=75°C

25°C

−25°C

Collector-emitter saturation voltage V

CE(sat)

(V)

Collector current I

(mA)

0.1 1 10 100

240

200

160

120

=10 V

=75°C

25°C

−25°C

Forward current transfer ratio h

Collector current I

(mA)

−0.1 −1−10 −100

400

300

100

200

=10 V

f =100 MHz

=25°C

Transition frequency f

(MHz)

Emitter current I

(mA)

−0.1 −1−10

=10 V

f =2 MHz

=25°C

Reverse transfer impedance Z

(Ω)

Emitter current I

(mA)

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC2295

SJC00112BED

Cre VCE NF IEbie gie

bre gre bfe gfe boe goe

0.1 1 10 100

3.0

2.5

2.0

1.5

1.0

0.5

f =10.7 MHz

=25°C

=3 mA

1 mA

Collector-emitter voltage VCE (V)

Reverse transfer capacitance C

(pF)

(Common emitter)

−0.1 −1−10

=6 V

f =100 MHz

=50 Ω

=25°C

Noise figure NF (dB)

Emitter current I

(mA)

0403282416

+jb

=10 V

f =10.7 MHz

=−1 mA

−2 mA

−4 mA −7 mA

100

Input conductance g

(mS)

Input susceptance b

(mS)

−0.5 0−0.1−0.4 −0.2−0.3

−0.6

−0.1

−0.2

−0.3

−0.4

−0.5

+jb

=10 V

f =10.7 MHz

=−1 mA

100

Reverse transfer conductance g

(mS)

Reverse transfer susceptance b

(mS)

0 1008020 6040

−120

−20

−40

−60

−80

−100

+jb

=10 V

f =10.7 MHz

100

10.7

−0.1 mA

−1 mA

−2 mA

=−4 mA

100

Forward transfer conductance g

(mS)

Forward transfer susceptance b

(mS)

00.50.40.1 0.30.2

1.2

1.0

0.8

0.6

0.4

0.2

yoe =goe +jboe

VCE =10 V

f =10.7 MHz

IE=−1 mA

100

Output conductance goe (mS)

Output susceptance boe (mS)

This product complies with the RoHS Directive (EU 2002/95/EC).

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products, and no license is granted under any intellectual property right or other right owned by our company or any other

company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other

company which may arise as a result of the use of technical information described in this book.

(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office

equipment, communications equipment, measuring instruments and household appliances).

Consult our sales staff in advance for information on the following applications:

–Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support

systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-

ucts may directly jeopardize life or harm the human body.

–Any applications other than the standard applications intended.

(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita

Electric Industrial Co., Ltd.

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