Cypress Semiconductor CY62138FV30 User manual

Cypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600

Document #: 001-08029 Rev. *E Revised March 26, 2007

CY62138FV30 MoBL®

2-Mbit (256K x 8) Static RAM

Features

• Very high speed: 45 ns

• Wide voltage range: 2.20V–3.60V

• Pin compatible with CY62138CV25/30/33

• Ultra low standby power

— Typical standby current: 1 µA

— Maximum standby current: 5 µA

• Ultra low active power

— Typical active current: 1.6 mA @ f = 1 MHz

• Easy memory expansion with CE1, CE2, and OE features

• Automatic power down when deselected

• CMOS for optimum speed and power

• Offered in Pb-free 36-ball VFBGA, 32-pin TSOP II, 32-pin

SOIC, 32-pin TSOP I and 32-pin STSOP packages

Functional Description [1]

The CY62138FV30 is a high performance CMOS static RAM

organized as 256K words by 8 bits. This device features

advanced circuit design to provide ultra low active current.

This is ideal for providing More Battery Life™ (MoBL®) in

portable applications such as cellular telephones. The device

also has an automatic power down feature that significantly

reduces power consumption. Place the device into standby

mode reducing power consumption when deselected (CE1

HIGH or CE2LOW).

To write to the device, take Chip Enable (CE1 LOW and CE2

HIGH) and Write Enable (WE) inputs LOW. Data on the eight

IO pins (IO0through IO7) is then written into the location

specified on the address pins (A0through A17).

To read from the device, take Chip Enable (CE1 LOW and CE2

HIGH) and Output Enable (OE) LOW while forcing Write

Enable (WE) HIGH. Under these conditions, the contents of

the memory location specified by the address pins appear on

the IO pins.

The eight input and output pins (IO0through IO7) are placed

in a high impedance state when the device is deselected (CE1

HIGH or CE2LOW), the outputs are disabled (OE HIGH), or

during a write operation (CE1 LOW and CE2HIGH and WE

LOW).

Logic Block Diagram

IO0

IO7

IO1

IO2

IO3

IO4

IO5

IO6

SENSE AMPS

POWER

DOWN

A13

A14

A15

A16

ROW DECODER

COLUMN DECODER

256K x 8

ARRAY

DATA IN DRIVERS

A10

A11

A17

CE1

CE2

A12

Note

1. For best practice recommendations, refer to the Cypress application note “System Design Guidelines” at http://www.cypress.com.

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Document #: 001-08029 Rev. *E Page 2 of 13

CY62138FV30 MoBL®

Pin Configuration [2]

Product Portfolio

Product

VCC Range (V) Speed

(ns)

Power Dissipation

Operating ICC (mA)

Standby ISB2 (µA)

f = 1 MHz f = fmax

Min Typ [3] Max Typ [3] Max Typ [3] Max Typ [3] Max

CY62138FV30LL 2.2 3.0 3.6 45 1.6 2.5 13 18 1 5

A15

A13

CE2

WE A7

IO4

IO5

IO6

IO7

A10

IO0

IO1

IO 2

IO 3

A16

CE1

A9A14

Top View

36-Ball VFBGA

32-Pin SOIC/TSOP II

Top View

VSS

VCC

CE1

A16

A14

A12

VCC

A13

TSOP I

Top View

(not to scale)

IO2

IO1

GND

IO7

IO4

IO5

IO6

IO0

CE1

A11

A517

CE2

A15

A17

A10

IO3

A16

A14

A12

VCC

A13

STSOP

Top View

(not to scale)

IO2

IO1

GND

IO7

IO4

IO5

IO6

IO0

CE1

A11

A59

CE2

A15

A17

A10

IO3

Note

2. NC pins are not connected on the die.

3. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA= 25°C.

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Document #: 001-08029 Rev. *E Page 3 of 13

CY62138FV30 MoBL®

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the

device. These user guidelines are not tested.

Storage Temperature ..................................–65°C to +150°C

Ambient Temperature with

Power Applied............................................... 55°C to +125°C

Supply Voltage to Ground

Potential........................................................... –0.3V to 3.9V

DC Voltage Applied to Outputs

in High-Z State [4, 5].......................................... –0.3V to 3.9V

DC Input Voltage [4, 5] .......................................–0.3V to 3.9V

Output Current into Outputs (LOW)............................. 20 mA

Static Discharge Voltage.......................................... > 2001V

(MIL-STD-883, Method 3015)

Latch-up Current .................................................... > 200 mA

Product Range Ambient

Temperature VCC [6]

CY62138FV30LL Industrial –40°C to +85°C 2.2V to 3.6V

Electrical Characteristics (Over the Operating Range)

Parameter Description Test Conditions 45 ns Unit

Min Typ [3] Max

VOH Output HIGH Voltage IOH = –0.1 mA 2.0 V

IOH = –1.0 mA, VCC >2.70V 2.4 V

VOL Output LOW Voltage IOL = 0.1 mA 0.4 V

IOL = 2.1 mA, VCC >2.70V 0.4 V

VIH Input HIGH Voltage VCC = 2.2V to 2.7V 1.8 VCC + 0.3V V

VCC= 2.7V to 3.6V 2.2 VCC + 0.3V V

VIL Input LOW Voltage VCC = 2.2V to 2.7V For BGA package –0.3 0.6 V

VCC= 2.7V to 3.6V –0.3 0.8 V

VCC = 2.2V to 3.6V For other packages –0.3 0.6 V

IIX Input Leakage Current GND < VI< VCC –1 +1 µA

IOZ Output Leakage Current GND < VO <VCC,

output disabled

–1 +1 µA

ICC VCC Operating Supply Current f = fmax = 1/tRC VCC = VCCmax

IOUT = 0 mA

CMOS levels

13 18 mA

f = 1 MHz 1.6 2.5

ISB1 Automatic CE Power Down

Current CMOS Inputs

CE1> VCC – 0.2V or CE2< 0.2V,

VIN > VCC – 0.2V, VIN <0.2V),

f = fmax (address and data only),

f = 0 (OE, and WE), VCC = 3.60V

15µA

ISB2 [7] Automatic CE Power Down

Current CMOS Inputs

CE1> VCC – 0.2V or CE2 <0.2V,

VIN > VCC – 0.2V or VIN < 0.2V,

f = 0, VCC = 3.60V

15µA

Capacitance (For all packages) [8]

Parameter Description Test Conditions Max Unit

CIN Input Capacitance TA= 25°C, f = 1 MHz,

VCC = VCC(typ.)

10 pF

COUT Output Capacitance 10 pF

Notes

4. VIL(min) = –2.0V for pulse durations less than 20 ns.

5. VIH(max) = VCC+0.75V for pulse durations less than 20 ns.

6. Full device AC operation assumes a 100 µs ramp time from 0 to VCC(min) and 200 µs wait time after VCC stabilization.

7. Only chip enables (CE1and CE2) must be at CMOS level to meet the ISB2 / ICCDR spec. Other inputs can be left floating.

8. Tested initially and after any design or process changes that may affect these parameters.

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Document #: 001-08029 Rev. *E Page 4 of 13

CY62138FV30 MoBL®

Thermal Resistance [8]

Parameter Description Test Conditions SOIC VFBGA TSOP II STSOP TSOP I Unit

ΘJA Thermal Resistance

(Junction to Ambient)

Still air, soldered on a 3 x 4.5

inch, two layer printed circuit

board

44.53 38.49 44.16 59.72 50.19 °C/W

ΘJC Thermal Resistance

(Junction to Case)

24.05 17.66 11.97 15.38 14.59 °C/W

AC Test Loads and Waveforms

Parameters 2.5V (2.2V to 2.7V) 3.0V (2.7V to 3.6V) Unit

R1 16667 1103 Ω

R2 15385 1554 Ω

RTH 8000 645 Ω

VTH 1.20 1.75 V

Data Retention Characteristics (Over the Operating Range)

Parameter Description Conditions Min Typ [3] Max Unit

VDR VCC for Data Retention 1.5 V

ICCDR [7] Data Retention Current VCC = 1.5V,

CE1> VCC − 0.2V or CE2< 0.2V,

VIN > VCC − 0.2V or VIN < 0.2V

14µA

tCDR [8] Chip Deselect to Data Retention Time 0 ns

tR [9] Operation Recovery Time tRC ns

Data Retention Waveform [10]

VCC

OUTPUT

30 pF

INCLUDING

JIG AND

SCOPE

GND

90%

10%

90%

10%

Rise Time = 1 V/ns Fall Time = 1 V/ns

OUTPUT V

Equivalent to: THEVENIN EQUIVALENT

ALL INPUT PULSES

RTH

VCC(min)

tCDR

VDR >1.5V

DATA RETENTION MODE

VCC

Notes:

9. Full device AC operation requires linear VCC ramp from VDR to VCC(min) > 100 µs or stable at VCC(min) > 100 µs.

10. CE is the logical combination of CE1and CE2. When CE1is LOW and CE2 is HIGH, CE is LOW; when CE1is HIGH or CE2is LOW, CE is HIGH.

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Document #: 001-08029 Rev. *E Page 5 of 13

CY62138FV30 MoBL®

Switching Characteristics (Over the Operating Range) [11]

Parameter Description

45 ns

Unit

Min Max

Read Cycle

tRC Read Cycle Time 45 ns

tAA Address to Data Valid 45 ns

tOHA Data Hold from Address Change 10 ns

tACE CE1 LOW and CE2 HIGH to Data Valid 45 ns

tDOE OE LOW to Data Valid 22 ns

tLZOE OE LOW to Low-Z [12] 5ns

tHZOE OE HIGH to High-Z [12,13] 18 ns

tLZCE CE1 LOW and CE2 HIGH to Low Z [12] 10 ns

tHZCE CE1 HIGH or CE2 LOW to High-Z [12, 13] 18 ns

tPU CE1 LOW and CE2 HIGH to Power Up 0ns

tPD CE1 HIGH or CE2 LOW to Power Down 45 ns

Write Cycle [14]

tWC Write Cycle Time 45 ns

tSCE CE1 LOW and CE2 HIGH to Write End 35 ns

tAW Address Setup to Write End 35 ns

tHA Address Hold from Write End 0 ns

tSA Address Setup to Write Start 0 ns

tPWE WE Pulse Width 35 ns

tSD Data Setup to Write End 25 ns

tHD Data Hold from Write End 0 ns

tHZWE WE LOW to High-Z [12, 13] 18 ns

tLZWE WE HIGH to Low-Z [12] 10 ns

Notes

11. Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less (1 V/ns), timing reference levels of VCC(typ)/2, input

pulse levels of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in the ““AC Test Loads and Waveforms” on page 4” .

12. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.

13. tHZOE, tHZCE, and tHZWE transitions are measured when the output enters a high impedance state.

14. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these

signals can terminate a write by going INACTIVE. Reference the data input setup and hold timing to the edge of the signal that terminates the write.

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Document #: 001-08029 Rev. *E Page 6 of 13

CY62138FV30 MoBL®

Switching Waveforms

Read Cycle 1 (Address transition controlled) [15, 16]

Read Cycle No. 2 (OE controlled) [10, 16, 17]

Write Cycle No. 1 (WE controlled) [10, 14, 18, 19]

PREVIOUS DATA VALID DATA VALID

tAA

tOHA

tRC

ADDRESS

DATA OUT

50%

DATA VALID

tRC

tACE

tDOE

tLZOE

tLZCE

tPU

HIGH IMPEDANCE

tHZOE

tHZCE

tPD

IMPEDANCE

ICC

ISB

HIGH

ADDRESS

DATA OUT

VCC

SUPPLY

CURRENT

DATA VALID

tHD

tSD

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZOE

ADDRESS

DATA IO

NOTE

Notes:

15. The device is continuously selected. OE, CE1= VIL, CE2= VIH.

16. WE is HIGH for read cycle.

17. Address valid before or similar to CE1transition LOW and CE2transition HIGH.

18. Data IO is high impedance if OE = VIH.

19. If CE1goes HIGH or CE2goes LOW simultaneously with WE HIGH, the output remains in high impedance state.

20. During this period, the IOs are in output state. Do not apply input signals.

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Document #: 001-08029 Rev. *E Page 7 of 13

CY62138FV30 MoBL®

Write Cycle No. 2 (CE1 or CE2 controlled) [10, 14, 18, 19]

Write Cycle No. 3 (WE controlled, OE LOW) [10, 19]

Truth Table

CE1CE2WE OE Inputs/Outputs Mode Power

H X X X High-Z Deselect/Power Down Standby (ISB)

X L X X High-Z Deselect/Power Down Standby (ISB)

L H H L Data Out Read Active (ICC)

L H H H High-Z Output Disabled Active (ICC)

L H L X Data in Write Active (ICC)

Switching Waveforms (continued)

tWC

DATA VALID

tAW

tSA

tPWE

tHA

tHD

tSD

tSCE

ADDRESS

DATA IO

DATA VALID

tHD

tSD

tLZWE

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZWE

ADDRESS

DATA IO

NOTE

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Document #: 001-08029 Rev. *E Page 8 of 13

CY62138FV30 MoBL®

Ordering Information

Speed

(ns) Ordering Code Package

Diagram Package Type Operating

Range

45 CY62138FV30LL-45BVXI 51-85149 36-ball VFBGA (Pb-free) Industrial

CY62138FV30LL-45ZSXI 51-85095 32-pin TSOP II (Pb-free)

CY62138FV30LL-45ZAXI 51-85094 32-pin STSOP (Pb-free)

CY62138FV30LL-45ZXI 51-85056 32-pin TSOP I (Pb-free)

CY62138FV30LL-45SXI 51-85081 32-pin SOIC (Pb-free)

Package Diagrams

Figure 1. 36-ball VFBGA (6 x 8 x 1 mm), 51-85149

A1 CORNER

0.75

Ø0.30±0.05(36X)

Ø0.25 M C A B

Ø0.05 M C

0.15(4X)

0.21±0.05

1.00 MAX

SEATING PLANE

0.55 MAX.

0.25 C

0.10 C

A1 CORNER

TOP VIEW BOTTOM VIEW

234

3.75

5.25

465231

6.00±0.10

8.00±0.10

6.00±0.10

1.875

2.625

0.26 MAX.

51-85149-*C

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Document #: 001-08029 Rev. *E Page 9 of 13

CY62138FV30 MoBL®

Figure 2. 32-pin TSOP II, 51-85095

Package Diagrams (continued)

51-85095-**

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Document #: 001-08029 Rev. *E Page 10 of 13

CY62138FV30 MoBL®

Figure 3. 32-pin (450 Mil) Molded SOIC, 51-85081

Package Diagrams (continued)

0.546[13.868]

0.440[11.176]

0.101[2.565]

0.050[1.270]

0.014[0.355]

0.118[2.997]

0.004[0.102]

0.047[1.193]

0.006[0.152]

0.023[0.584]

0.793[20.142]

0.450[11.430]

0.566[14.376]

0.111[2.819]

0.817[20.751]

BSC.

0.020[0.508]

MIN.

MAX.

0.012[0.304]

0.039[0.990]

0.063[1.600]

SEATING PLANE

116

17 32

0.004[0.102]

51-85081-*B

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