Cypress Semiconductor CY62146EV30 User manual

CY62146EV30 MoBL®

4-Mbit (256K x 16) Static RAM

Cypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600

Document #: 38-05567 Rev. *C Revised March 26, 2007

Features

• Very high speed: 45 ns

• Wide voltage range: 2.20V–3.60V

• Pin compatible with CY62146DV30

• Ultra low standby power

— Typical standby current: 1 µA

— Maximum standby current: 7 µA

• Ultra low active power

— Typical active current: 2 mA @ f = 1 MHz

• Easy memory expansion with CE, and OE features

• Automatic power down when deselected

• CMOS for optimum speed and power

• Available in a Pb-free 48-ball VFBGA and 44-pin TSOP II

packages

Functional Description [1]

The CY62146EV30 is a high performance CMOS static RAM

organized as 256K words by 16 bits. This device features

advanced circuit design to provide ultra low active current.

This is ideal for providing More Battery Life™ (MoBL®) in

portable applications such as cellular telephones. The device

also has an automatic power down feature that significantly

reduces power consumption by 80% when addresses are not

toggling. The device can also be put into standby mode

reducing power consumption by more than 99% when

deselected (CE HIGH). The input and output pins (IO0through

IO15) are placed in a high impedance state when:

• Deselected (CE HIGH)

• Outputs are disabled (OE HIGH)

• Both Byte High Enable and Byte Low Enable are disabled

(BHE, BLE HIGH)

• Write operation is active (CE LOW and WE LOW)

Write to the device by taking Chip Enable (CE) and Write

Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW,

then data from IO pins (IO0through IO7), is written into the

location specified on the address pins (A0through A17). If Byte

High Enable (BHE) is LOW, then data from IO pins (IO8

through IO15) is written into the location specified on the

address pins (A0through A17).

Read from the device by taking Chip Enable (CE) and Output

Enable (OE) LOW while forcing the Write Enable (WE) HIGH.

If Byte Low Enable (BLE) is LOW, then data from the memory

location specified by the address pins appear on IO0to IO7. If

Byte High Enable (BHE) is LOW, then data from memory

appears on IO8to IO15. See the “Truth Table” on page 9 for a

complete description of read and write modes.

Product Portfolio

Product VCC Range (V) Speed

(ns)

Power Dissipation

Operating ICC (mA)

Standby ISB2 (µA)

f = 1 MHz f = fmax

Min Typ [2] Max Typ [2] Max Typ [2] Max Typ [2] Max

CY62146EV30LL 2.2 3.0 3.6 45 ns 2 2.5 15 20 1 7

Notes:

1. For best practice recommendations, please refer to the Cypress application note System Design Guidelines on http://www.cypress.com.

2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA= 25°C.

CY62146EV30 MoBL®

Document #: 38-05567 Rev. *C Page 2 of 12

Logic Block Diagram

Pin Configurations [3, 4]

256K x 16

RAM Array IO0–IO7

ROW DECODER

COLUMN DECODER

A11

A12

A13

A14

A15

SENSE AMPS

DATA IN DRIVERS

A3IO8–IO15

BHE

A16

A10

BLE

A17

14 31

BHE

BLE

48-ball VFBGA

44-pin TSOP II

Top View Top View

A11

A10

A3CE

IO10

IO8

IO9

IO11

IO13

IO12

IO14

IO15

VSS

IO0

BHE

BLE

IO2

IO1

IO3

IO4

IO5IO6

IO7

A15

A14

A13

A12

NC NC

326

A16

VCC

VCC VSS

A17

Notes:

3. NC pins are not connected on the die.

4. Pins H1, G2, and H6 in the BGA package are address expansion pins for 8 Mb, 16 Mb and 32 Mb, respectively.

CY62146EV30 MoBL®

Document #: 38-05567 Rev. *C Page 3 of 12

Maximum Ratings

Exceeding the maximum ratings may impair the useful life of

the device. These user guidelines are not tested.

Storage Temperature ................................ –65°C to + 150°C

Ambient Temperature with

Power Applied ........................................... –55°C to + 125°C

Supply Voltage to Ground

Potential .............................–0.3V to + 3.9V (VCCmax + 0.3V)

DC Voltage Applied to Outputs

in High-Z State [5, 6]................–0.3V to 3.9V (VCCmax + 0.3V)

DC Input Voltage [5, 6] ........... –0.3V to 3.9V (VCC max + 0.3V)

Output Current into Outputs (LOW) ............................ 20 mA

Static Discharge Voltage ......................................... >2001V

(per MIL-STD-883, Method 3015)

Latch-up Current ..................................................... >200 mA

Operating Range

Device Range

Ambient

Temperature VCC [7]

CY62146EV30 Industrial –40°C to +85°C 2.2V to 3.6V

Electrical Characteristics (Over the Operating Range)

Parameter Description Test Conditions

45 ns

UnitMin Typ [2] Max

VOH Output HIGH Voltage IOH = –0.1 mA 2.0 V

IOH = –1.0 mA, VCC >2.70V 2.4 V

VOL Output LOW Voltage IOL = 0.1 mA 0.4 V

IOL = 2.1 mA, VCC >2.70V 0.4 V

VIH Input HIGH Voltage VCC = 2.2V to 2.7V 1.8 VCC + 0.3 V

VCC= 2.7V to 3.6V 2.2 VCC + 0.3 V

VIL Input LOW Voltage VCC = 2.2V to 2.7V –0.3 0.6 V

VCC= 2.7V to 3.6V –0.3 0.8 V

IIX Input Leakage Current GND < VI< VCC –1 +1 µA

IOZ Output Leakage Current GND < VO <VCC, Output Disabled –1 +1 µA

ICC VCC Operating Supply Current f = fmax = 1/tRC VCC = VCC(max),

IOUT = 0 mA

CMOS levels

15 20 mA

f = 1 MHz 2 2.5

ISB1 Automatic CE Power down

Current — CMOS Inputs

CE > VCC−0.2V,

VIN >VCC–0.2V or VIN <0.2V

f = fmax (Address and Data Only),

f = 0 (OE, BHE, BLE and WE), VCC = 3.60V

17µA

ISB2 [8] Automatic CE Power down

Current — CMOS Inputs

CE > VCC – 0.2V,

VIN > VCC – 0.2V or VIN < 0.2V,

f = 0, VCC = 3.60V

17µA

Notes:

5. VIL(min) = –2.0V for pulse durations less than 20 ns.

6. VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.

7. Full device AC operation assumes a minimum of 100 µs ramp time from 0 to Vcc(min) and 200 µs wait time after Vcc stabilization.

8. Only chip enable (CE) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating.

CY62146EV30 MoBL®

Document #: 38-05567 Rev. *C Page 4 of 12

Capacitance (For All Packages) [9]

Parameter Description Test Conditions Max Unit

CIN Input Capacitance TA= 25°C, f = 1 MHz,

VCC = VCC(typ)

10 pF

COUT Output Capacitance 10 pF

Thermal Resistance [9]

Parameter Description Test Conditions

VFBGA

Package

TSOP II

Package Unit

ΘJA Thermal Resistance

(Junction to Ambient)

Still Air, soldered on a 3 × 4.5 inch,

two-layer printed circuit board

75 77 °C/W

ΘJC Thermal Resistance

(Junction to Case)

10 13 °C/W

AC Test Loads and Waveforms

Parameters 2.50V 3.0V Unit

R1 16667 1103 Ω

R2 15385 1554 Ω

RTH 8000 645 Ω

VTH 1.20 1.75 V

Data Retention Characteristics (Over the Operating Range)

Parameter Description Conditions Min Typ [2] Max Unit

VDR VCC for Data Retention 1.5 V

ICCDR [8] Data Retention Current VCC = 1.5V, CE > VCC – 0.2V,

VIN > VCC – 0.2V or VIN < 0.2V

0.8 7 µA

tCDR [9] Chip Deselect to Data Retention Time 0 ns

tR [10] Operation Recovery Time tRC ns

Data Retention Waveform

VCC

OUTPUT

30 pF

INCLUDING

JIG AND

SCOPE

GND

90%

10%

90%

10%

Rise Time = 1 V/ns Fall Time = 1 V/ns

OUTPUT V

ALL INPUT PULSES

RTH

Equivalent to: THEVENIN EQUIVALENT

VCC(min)

tCDR

VDR >1.5V

DATA RETENTION MODE

VCC

Notes:

9. Tested initially and after any design or process changes that may affect these parameters.

10. Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 µs or stable at VCC(min) > 100 µs.

CY62146EV30 MoBL®

Document #: 38-05567 Rev. *C Page 5 of 12

Switching Characteristics (Over the Operating Range) [11, 12]

Parameter Description

45 ns

UnitMin Max

Read Cycle

tRC Read Cycle Time 45 ns

tAA Address to Data Valid 45 ns

tOHA Data Hold from Address Change 10 ns

tACE CE LOW to Data Valid 45 ns

tDOE OE LOW to Data Valid 22 ns

tLZOE OE LOW to Low-Z [13] 5ns

tHZOE OE HIGH to High-Z [13, 14] 18 ns

tLZCE CE LOW to Low-Z [13] 10 ns

tHZCE CE HIGH to High-Z [13, 14] 18 ns

tPU CE LOW to Power Up 0ns

tPD CE HIGH to Power Down 45 ns

tDBE BLE / BHE LOW to Data Valid 22 ns

tLZBE BLE / BHE LOW to Low-Z [13] 5ns

tHZBE BLE / BHE HIGH to High-Z [13, 14] 18 ns

Write Cycle [15]

tWC Write Cycle Time 45 ns

tSCE CE LOW to Write End 35 ns

tAW Address Setup to Write End 35 ns

tHA Address Hold from Write End 0 ns

tSA Address Setup to Write Start 0 ns

tPWE WE Pulse Width 35 ns

tBW BLE / BHE LOW to Write End 35 ns

tSD Data Setup to Write End 25 ns

tHD Data Hold from Write End 0 ns

tHZWE WE LOW to High-Z [13, 14] 18 ns

tLZWE WE HIGH to Low-Z [13] 10 ns

otes:

11. Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns (1V/ns) or less, timing reference levels of VCC(typ)/2, input

pulse levels of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in the “AC Test Loads and Waveforms” on page 4.

12. AC timing parameters are subject to byte enable signals (BHE or BLE) not switching when chip is disabled. Please see application note AN13842 for further

clarification.

13. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any

given device.

14. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high impedence state.

15. The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE and/or BLE = VIL. All signals must be ACTIVE to initiate a write and any of

these signals can terminate a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write.

CY62146EV30 MoBL®

Document #: 38-05567 Rev. *C Page 6 of 12

Switching Waveforms

Read Cycle 1 (Address Transition Controlled) [16, 17]

Read Cycle No. 2 (OE Controlled) [17, 18]

PREVIOUS DATA VALID DATA VALID

tRC

tAA

tOHA

ADDRESS

DATA OUT

50%

DATA VALID

ACE

LZBE

LZCE

HIGHIMPEDANCE

HZOE

HZCE

HZBE

LZOE

DBE

DOE

IMPEDANCE

HIGH

DATA OUT

SUPPLY

CURRENT

BHE/BLE

ADDRESS

Notes:

16. The device is continuously selected. OE, CE = VIL, BHE and/or BLE = VIL.

17. WE is HIGH for read cycle.

18. Address valid before or similar to CE and BHE, BLE transition LOW.

CY62146EV30 MoBL®

Document #: 38-05567 Rev. *C Page 7 of 12

Write Cycle No. 1 (WE Controlled) [15, 19, 20]

Write Cycle No. 2 (CE Controlled) [15, 19, 20]

Switching Waveforms (continued)

tHD

tSD

tPWE

tSA

tHA

tAW

tWC

tHZOE

DATAIN

NOTE 21

tBW

tSCE

DATA IO

ADDRESS

BHE/BLE

tHD

tSD

tPWE

tHA

tAW

tSCE

tWC

tHZOE

DATAIN

tBW

tSA

ADDRESS

DATA IO

BHE/BLE

NOTE 21

Notes:

19. Data IO is high impedance if OE = VIH.

20. If CE goes HIGH simultaneously with WE = VIH, the output remains in a high impedance state.

21. During this period, the IOs are in output state and input signals must not be applied.

CY62146EV30 MoBL®

Document #: 38-05567 Rev. *C Page 8 of 12

Write Cycle No. 3 (WE Controlled, OE LOW) [20]

Write Cycle No. 4 (BHE/BLE Controlled, OE LOW) [20]

Switching Waveforms (continued)

DATAIN

tHD

tSD

tLZWE

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZWE

tBW

NOTE 21

ADDRESS

DATA IO

BHE/BLE

tWC

DATA

tSCE

PWE

tHZWE

tLZWE

NOTE 21

DATA IO

ADDRESS

BHE/BLE

CY62146EV30 MoBL®

Document #: 38-05567 Rev. *C Page 9 of 12

Truth Table

CE WE OE BHE BLE Inputs/Outputs Mode Power

H X X X X High-Z Deselect/Power down Standby (ISB)

L X X H H High-Z Output Disabled Active (ICC)

L H L L L Data Out (IO0–IO15) Read Active (ICC)

L H L H L Data Out (IO0–IO7);

IO8–IO15 in High-Z

Read Active (ICC)

L H L L H Data Out (IO8–IO15);

IO0–IO7 in High-Z

Read Active (ICC)

L H H L L High-Z Output Disabled Active (ICC)

L H H H L High-Z Output Disabled Active (ICC)

L H H L H High-Z Output Disabled Active (ICC)

L L X L L Data In (IO0–IO15) Write Active (ICC)

L L X H L Data In (IO0–IO7);

IO8–IO15 in High-Z

Write Active (ICC)

L L X L H Data In (IO8–IO15);

IO0–IO7 in High-Z

Write Active (ICC)

Ordering Information

Speed

(ns) Ordering Code

Package

Diagram Package Type

Operating

Range

45 CY62146EV30LL-45BVXI 51-85150 48-ball VFBGA (Pb-free) Industrial

CY62146EV30LL-45ZSXI 51-85087 44-pin TSOP II (Pb-free)

Please contact your local Cypress sales representative for availability of other parts

CY62146EV30 MoBL®

Document #: 38-05567 Rev. *C Page 10 of 12

Package Diagrams

Figure 1. 48-ball VFBGA (6 x 8 x 1 mm), 51-85150

A1 CORNER

0.75

Ø0.30±0.05(48X)

Ø0.25 M C A B

Ø0.05 M C

0.15(4X)

0.21±0.05

1.00 MAX

SEATING PLANE

0.55 MAX.

0.25 C

0.10 C

A1 CORNER

TOP VIEW BOTTOM VIEW

234

3.75

5.25

465231

6.00±0.10

8.00±0.10

6.00±0.10

1.875

2.625

0.26 MAX.

51-85150-*D

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