Cypress Semiconductor CY7C1041DV33 User manual

Cypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600

Document #: 38-05473 Rev. *E Revised July 17, 2008

CY7C1041DV33

4 Mbit (256K x 16) Static RAM

Features

■Pin and function compatible with CY7C1041CV33

■High speed

❐tAA = 10 ns

■Low active power

❐ICC = 90 mA at 10 ns (industrial)

■Low CMOS standby power

❐ISB2 = 10 mA

■2.0V data retention

■Automatic power down when deselected

■TTL compatible inputs and outputs

■Easy memory expansion with CE and OE features

■Available in Pb-free 48-ball VFBGA, 44-pin (400-mil) molded

SOJ, and 44-pin TSOP II packages

Functional Description

TheCY7C1041DV33[1] is ahighperformance CMOS StaticRAM

organized as 256K words by 16 bits. To write to the device, take

Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte

LOW Enable (BLE) is LOW, then data from IO pins (IO0 to IO7)

is written into the location specified on the address pins (A0to

A17). If Byte HIGH Enable (BHE) is LOW, then data from IO pins

(IO8to IO15) is written into the location specified on the address

pins (A0to A17).

To read from the device, take Chip Enable (CE) and Output

Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If

BLE is LOW, then data from the memory location specified by

theaddress pins appears on IO0to IO7. If BHE is LOW, then data

from memory appears on IO8to IO15. See the Truth Table on

page 9 for a complete description of read and write modes.

The input and output pins (IO0to IO15) are placed in a high

impedance state when the device is deselected (CE HIGH),

outputs are disabled (OE HIGH), BHE and BLE are disabled

(BHE, BLE HIGH), or during a write operation (CE LOW and WE

LOW).

The CY7C1041DV33 is available in a standard 44-pin 400-mil

wide SOJ and 44-pin TSOP II package with center power and

ground (revolutionary) pinout and a 48-ball fine-pitch ball grid

array (FBGA) package.

COLUMN

DECODER

ROW DECODER

SENSE AMPS

INPUT BUFFER

256K × 16

A11

A13

A12

A16

A17

A10

IO0–IO7

IO8–IO15

BLE

BHE

Logic Block Diagram

Note

1. For guidelines on SRAM system design, refer to the “System Design Guidelines” Cypress application note, available at www.cypress.com.

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CY7C1041DV33

Document #: 38-05473 Rev. *E Page 2 of 13

Selection Guide

Description –10 (Industrial) –12 (Automotive)[2] Unit

Maximum Access Time 10 12 ns

Maximum Operating Current 90 95 mA

Maximum CMOS Standby Current 10 15 mA

Pin Configuration

Figure 1. 44-Pin SOJ/TSOP II

Figure 2. 48-Ball VFBGA (Pinout 1) [3, 4] Figure 3. 48-Ball VFBGA (Pinout 2) [3, 4]

14 31

15 29

19 27

21 23

BHE

BLE

VCC

A11

A10

A3CE

IO 0

IO1

IO3

IO5

IO4

IO6

IO7

VSS

IO8

BHE

A17

BLE

VCC

IO9

IO10

IO11

IO12

IO13 IO14

IO15

A15

A14

A13

A12

NC NC

A16

VCC

A11

A10

A3CE

IO 8

IO9

IO13

IO12

IO14

IO15

VSS

IO0

BHE

A17

BLE

VCC

IO2

IO 1

IO3

IO4

IO5IO6

IO7

A15

A14

A13

A12

NC NC

A16

Notes

2. Automotive product information is Preliminary.

3. NC pins are not connected on the die.

4. Pinout 1 is compliant with CY7C1041CV33 and pinout 2 is JEDEC compliant. The difference between the two is that the higher and lower byte IOs (IO[7:0] and IO[15:8]

balls) are swapped.

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CY7C1041DV33

Document #: 38-05473 Rev. *E Page 3 of 13

Maximum Ratings

Exceeding maximum ratings may shorten the useful life of the

device. These user guidelines are not tested.

Storage Temperature ................................. –65°C to +150°C

Ambient Temperature with

Power Applied ............................................ –55°C to +125°C

Supply Voltage on VCC Relative to GND [5]....–0.3V to +4.6V

DC Voltage Applied to Outputs

in High-Z State [5]....................................–0.3V to VCC +0.3V

DC Input Voltage [5] ................................–0.3V to VCC +0.3V

Current into Outputs (LOW) ........................................20 mA

Static Discharge Voltage............................................>2001V

(MIL-STD-883, Method 3015)

Latch Up Current.....................................................>200 mA

Operating Range

Range Ambient

Temperature VCC Speed

Industrial –40°C to +85°C3.3V±0.3V 10 ns

Automotive –40°C to +125°C3.3V ±0.3V 12 ns

DC Electrical Characteristics

Over the Operating Range

Parameter Description Test Conditions –10 (Industrial) –12 (Automotive) Unit

Min Max Min Max

VOH Output HIGH Voltage VCC = Min, IOH = –4.0 mA 2.4 2.4 V

VOL Output LOW Voltage VCC = Min, IOL = 8.0 mA 0.4 0.4 V

VIH[5] Input HIGH Voltage 2.0 VCC + 0.3 2.0 VCC + 0.3 V

VIL[5] Input LOW Voltage –0.3 0.8 –0.3 0.8 V

IIX Input Leakage Current GND < VI< VCC –1 +1 –1 +1 μA

IOZ Output Leakage

Current GND < VOUT <VCC, Output Disabled –1 +1 –1 +1 μA

ICC VCC Operating

Supply Current VCC = Max, f = fMAX = 1/tRC 100 MHz 90 -mA

83 MHz 80 95 mA

66 MHz 70 85 mA

40 MHz 60 75 mA

ISB1 Automatic CE Power Down

Current—TTL Inputs Max VCC, CE > VIH

VIN > VIH or

VIN < VIL, f = fMAX

20 25 mA

ISB2 Automatic CE Power Down

Current—CMOS Inputs Max VCC,

CE > VCC – 0.3V,

VIN > VCC – 0.3V,

or VIN < 0.3V, f = 0

10 15 mA

Note

5. Minimum voltage is –2.0V andVIH(max) = VCC + 2V for pulse durations of less than 20 ns.

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CY7C1041DV33

Document #: 38-05473 Rev. *E Page 4 of 13

Capacitance[6]

Parameter Description Test Conditions Max Unit

CIN Input Capacitance TA= 25°C, f = 1 MHz, VCC = 3.3V 8 pF

COUT IO Capacitance 8 pF

Thermal Resistance[6]

Parameter Description Test Conditions FBGA

Package SOJ

Package TSOP II

Package Unit

ΘJA Thermal Resistance (Junction

to Ambient) Still Air, soldered on a 3 × 4.5 inch,

four layer printed circuit board 27.89 57.91 50.66 °C/W

ΘJC Thermal Resistance (Junction

to Case) 14.74 36.73 17.17 °C/W

AC Test Loads and Waveforms

The AC test loads and waveform diagram follows.[7]

90%

10%

3.0V

GND

90%

10%

ALL INPUT PULSES

* CAPACITIVE LOAD CONSISTS

OF ALL COMPONENTS OF THE

TEST ENVIRONMENT Rise Time: 1 V/ns Fall Time: 1 V/ns

30 pF*

OUTPUT Z = 50Ω

50Ω

1.5V

(b)

(a)

3.3V

OUTPUT

5 pF

(c)

R 317Ω

351Ω

High-Z Characteristics

10 ns device

Notes

6. Tested initially and after any design or process changes that may affect these parameters.

7. AC characteristics (except High-Z) are tested using the load conditions shown in AC Test Loads and Waveforms (a). High-Z characteristics are tested for all speeds

using the test load shown in (c).

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CY7C1041DV33

Document #: 38-05473 Rev. *E Page 5 of 13

AC Switching Characteristics Over the Operating Range[8]

Parameter Description –10 (Industrial) –12 (Automotive) Unit

Min Max Min Max

Read Cycle

tpower[9] VCC(Typical) to the First Access 100 100 μs

tRC Read Cycle Time 10 12 ns

tAA Address to Data Valid 10 12 ns

tOHA Data Hold from Address Change 3 3ns

tACE CE LOW to Data Valid 10 12 ns

tDOE OE LOW to Data Valid 5 6ns

tLZOE OE LOW to Low-Z 0 0ns

tHZOE OE HIGH to High-Z[10, 11] 56ns

tLZCE CE LOW to Low-Z[11] 3 3 ns

tHZCE CE HIGH to High-Z[10, 11] 56ns

tPU CE LOW to Power Up 0 0ns

tPD CE HIGH to Power Down 10 12 ns

tDBE Byte Enable to Data Valid 5 6ns

tLZBE Byte Enable to Low-Z 0 0ns

tHZBE Byte Disable to High-Z 6 6ns

Write Cycle[12, 13]

tWC Write Cycle Time 10 12 ns

tSCE CE LOW to Write End 7 8ns

tAW Address Setup to Write End 7 8ns

tHA Address Hold from Write End 0 0ns

tSA Address Setup to Write Start 0 0ns

tPWE WE Pulse Width 7 8ns

tSD Data Setup to Write End 5 6ns

tHD Data Hold from Write End 0 0ns

tLZWE WE HIGH to Low-Z[11] 3 3 ns

tHZWE WE LOW to High-Z[10, 11] 56ns

tBW Byte Enable to End of Write 7 8ns

Notes

8. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH

and 30-pF load capacitance.

9. tPOWER gives the minimum amount of time that the power supply should be at typical VCC values until the first memory access is performed.

10.tHZOE, tHZCE, tHZBE, and tHZWE are specified with a load capacitance of 5 pF as in part (c) of AC Test Loads and Waveforms. Transition is measuredwhen the outputs enter

a high impedance state.

11. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, tHZBE is less than tLZBE, and tHZWE is less than tLZWE for any given

device.

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Document #: 38-05473 Rev. *E Page 6 of 13

Data Retention Characteristics Over the Operating Range

Parameter Description Conditions[14] Min Max Unit

VDR VCC for Data Retention 2.0 V

ICCDR Data Retention Current VCC = VDR = 2.0V,

CE > VCC – 0.3V,

VIN > VCC – 0.3V or VIN < 0.3V

Ind’l 10 mA

Auto 15 mA

tCDR[6] Chip Deselect to Data Retention Time 0 ns

tR[15] Operation Recovery Time tRC ns

Data Retention Waveform

3.0V3.0V

tCDR

VDR >2V

DATA RETENTION MODE

VCC

Switching Waveforms

Figure 4. Read Cycle No. 1[16, 17]

PREVIOUS DATA VALID DATA VALID

tRC

tAA

tOHA

ADDRESS

DATA OUT

Notes

12.The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write and the transition of either of

these signals can terminate the write. The input data setup and hold timing should be referenced to the leading edge of the signal that terminates the write.

13.The minimum write cycle time for Write Cycle No. 4 (WE controlled, OE LOW) is the sum of tHZWE and tSD.

14.No input may exceed VCC + 0.3V.

15.Full device operation requires linear VCC ramp from VDR to VCC(min.) >50 μs or stable at VCC(min.) >50 μs.

16.Device is continuously selected. OE, CE, BHE, and BHE = VIL.

17.WE is HIGH for read cycle.

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Document #: 38-05473 Rev. *E Page 7 of 13

Figure 5. Read Cycle No. 2 (OE Controlled)[17, 18]

Figure 6. Write Cycle No. 1 (CE Controlled)[19, 20]

Switching Waveforms (continued)

50%

DATA VALID

tRC

tACE

tDOE

tLZOE

tLZCE

tPU

HIGH IMPEDANCE

tHZOE

tHZBE

tPD

HIGH

ICC

ISB

IMPEDANCE

ADDRESS

DATA OUT

VCC

SUPPLY

tDBE

tLZBE

tHZCE

BHE,BLE

CURRENT

ICC

ISB

tHD

tSD

tSCE

tSA

tHA

tAW

tPWE

tWC

DATAIO

ADDRESS

BHE, BLE

Notes

18.Address valid prior to or coincident with CE transition LOW.

19.Data IO is high impedance if OE or BHE and BLE = VIH.

20.If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.

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CY7C1041DV33

Document #: 38-05473 Rev. *E Page 8 of 13

Figure 7. Write Cycle No. 2 (BLE or BHE Controlled)

Figure 8. Write Cycle No. 3 (WE Controlled, OE HIGH During Write)[19, 20]

Switching Waveforms (continued)

tHD

tSD

tBW

tSA

tHA

tAW

tPWE

tWC

tSCE

DATAIO

ADDRESS

BHE,BLE

tHD

tSD

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZOE

DATAIN VALID

ADDRESS

DATA IO

NOTE 21

BHE,BLE

Note

21.During this period the IOs are in the output state and input signals should not be applied.

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CY7C1041DV33

Document #: 38-05473 Rev. *E Page 9 of 13

Figure 9. Write Cycle No. 4 (WE Controlled, OE LOW)

Truth Table

CE OE WE BLE BHE IO0–IO7IO8–IO15 Mode Power

H X X X X High-Z High-Z Power Down Standby (ISB)

L L H L L Data Out Data Out Read All Bits Active (ICC)

L L H L H Data Out High-Z Read Lower Bits Only Active (ICC)

L L H H L High-Z Data Out Read Upper Bits Only Active (ICC)

L X L L L Data In Data In Write All Bits Active (ICC)

L X L L H Data In High-Z Write Lower Bits Only Active (ICC)

L X L H L High-Z Data In Write Upper Bits Only Active (ICC)

L H H X X High-Z High-Z Selected, Outputs Disabled Active (ICC)

Switching Waveforms (continued)

tHD

tSD

tSCE

tHA

tAW

tPWE

tWC

tBW

DATA IO

ADDRESS

BHE,BLE

tSA

tLZWE

tHZWE

NOTE 21

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CY7C1041DV33

Document #: 38-05473 Rev. *E Page 10 of 13

Ordering Information

Speed

(ns) Ordering Code Package

Diagram Package Type Operating

Range

10 CY7C1041DV33-10BVI 51-85150 48-Ball VFBGA Industrial

CY7C1041DV33-10BVXI 48-Ball VFBGA (Pb-Free) Pinout - 1 [4]

CY7C1041DV33-10BVJXI 48-Ball VFBGA (Pb-Free) Pinout - 2 [4]

CY7C1041DV33-10VXI 51-85082 44-Pin (400-mil) Molded SOJ (Pb-Free)

CY7C1041DV33-10ZSXI 51-85087 44-Pin TSOP II (Pb-Free)

12 CY7C1041DV33-12BVXE 51-85150 48-Ball VFBGA (Pb-Free) Automotive

CY7C1041DV33-12VXE 51-85082 44-Pin (400-mil) Molded SOJ (Pb-Free)

CY7C1041DV33-12ZSXE 51-85087 44-Pin TSOP II (Pb-Free)

Please contact your local Cypress sales representative for availability of these parts

Package Diagrams Figure 10. 48-Ball VFBGA (6 x 8 x 1 mm) (51-85150)

A1 CORNER

0.75

Ø0.30±0.05(48X)

Ø0.25 M C A B

Ø0.05 M C

0.15(4X)

0.21±0.05

1.00 MAX

SEATING PLANE

0.55 MAX.

0.25 C

0.10 C

A1 CORNER

TOP VIEW BOTTOM VIEW

234

3.75

5.25

465231

6.00±0.10

8.00±0.10

6.00±0.10

1.875

2.625

0.26 MAX.

51-85150-*D

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