Cypress Semiconductor CY62157ESL User manual

CY62157ESL MoBL®

8-Mbit (512K x 16) Static RAM

Cypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600

Document #: 001-43141 Rev. ** Revised January 04, 2008

Features

■Very high speed: 45 ns

■Wide voltage range: 2.2V–3.6V and 4.5V–5.5V

■Ultra low standby power

❐Typical Standby current: 2 μA

❐Maximum Standby current: 8 μA

■Ultra low active power

❐Typical active current: 1.8 mA at f = 1 MHz

■Easy memory expansion with CE and OE features

■Automatic power down when deselected

■CMOS for optimum speed and power

■Available in Pb-free 44-pin TSOP II package

Functional Description

The CY62157ESL is a high performance CMOS static RAM

organized as 512K words by 16 bits. This device features

advanced circuit design to provide ultra low active current. This

is ideal for providing More Battery Life™(MoBL®) in portable

applications such as cellular telephones. The device also has an

automatic power down feature that significantly reduces power

consumption when addresses are not toggling. Place the device

into standby mode when deselected (CE HIGH or both BHE and

BLE are HIGH). The input or output pins (IO0through IO15) are

placed in a high impedance state when:

■Deselected (CE HIGH)

■Outputs are disabled (OE HIGH)

■Both Byte High Enable and Byte Low Enable are disabled

(BHE, BLE HIGH)

■Write operation is active (CE LOW and WE LOW)

To write to the device, take Chip Enable (CE) and Write Enable

(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data

from IO pins (IO0through IO7) is written into the location

specified on the address pins (A0through A18). If Byte High

Enable (BHE) is LOW, then data from IO pins (IO8through IO15)

is written into the location specified on the address pins (A0

through A18).

To read from the device, take Chip Enable (CE) and Output

Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If

Byte Low Enable (BLE) is LOW, then data from the memory

location specified by the address pins appear on IO0to IO7. If

Byte High Enable (BHE) is LOW, then data from memory

appears on IO8to IO15. See the Truth Table on page 10 for a

complete description of read and write modes.

For best practice recommendations, refer to the Cypress

application note AN1064, SRAM System Guidelines.

Logic Block Diagram

512K x 16

RAM Array IO0–IO7

ROW DECODER

COLUMN DECODER

A11

A12

A13

A14

A15

SENSE AMPS

DATA IN DRIVERS

A3IO8–IO15

BLE

BHE

A16

A17

A10

A18

PowerDown

Circuit BHE

BLE

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CY62157ESL MoBL®

Document #: 001-43141 Rev. ** Page 2 of 12

Pin Configuration

Figure 1. 44-Pin TSOP II (Top View)

Product Portfolio

Product Range VCC Range (V) [1] Speed

(ns)

Power Dissipation

Operating ICC, (mA) Standby, ISB2

(μA)

f = 1MHz f = fmax

Typ [2] Max Typ [2] Max Typ [2] Max

CY62157ESL Industrial 2.2V–3.6V and 4.5V–5.5V 45 1.8 3 18 25 2 8

14 31

15 29

19 27

21 23

A17

A10

A11

A12

A15

A16

BHE

BLE

IO0

IO1

IO2

IO3

IO4

IO5

IO6

IO7IO8

IO9

IO10

IO11

IO12

IO13

IO14

IO15

VCC VCC

VSS

A18

A14

A13

Notes

1. Datasheet specifications are not guaranteed for VCC in the range of 3.6V to 4.5V.

2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = 3V, and VCC = 5V, TA= 25°C.

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CY62157ESL MoBL®

Document #: 001-43141 Rev. ** Page 3 of 12

Maximum Ratings

Exceeding the maximum ratings may impair the useful life of the

device. These user guidelines are not tested.

Storage Temperature.................................. –65°C to +150°C

Ambient Temperature with

Power Applied ............................................ –55°C to +125°C

Supply Voltage to Ground Potential..................–0.5V to 6.0V

DC Voltage Applied to Outputs

in High-Z State[3, 4] ...........................................–0.5V to 6.0V

DC Input Voltage[3, 4]........................................–0.5V to 6.0V

Output Current into Outputs (LOW).............................20 mA

Static Discharge Voltage............................................>2001V

(MIL-STD-883, Method 3015)

Latch up Current......................................................>200 mA

Operating Range

Device Range Ambient

Temperature VCC[5]

CY62157ESL Industrial –40°C to +85°C 2.2V–3.6V,

and

4.5V–5.5V

Electrical Characteristics

Over the Operating Range

Parameter Description Test Conditions 45 ns UnitMin Typ [2] Max

VOH Output HIGH Voltage 2.2 < VCC < 2.7 IOH = –0.1 mA 2.0 V

2.7 < VCC < 3.6 IOH = –1.0 mA 2.4

4.5 < VCC < 5.5 IOH = –1.0 mA 2.4

VOL Output LOW Voltage 2.2 < VCC < 2.7 IOL = 0.1 mA 0.4 V

2.7 < VCC < 3.6 IOL = 2.1mA 0.4

4.5 < VCC < 5.5 IOL = 2.1mA 0.4

VIH Input HIGH Voltage 2.2 < VCC < 2.7 1.8 VCC + 0.3 V

2.7 < VCC < 3.6 2.2 VCC + 0.3

4.5 < VCC < 5.5 2.2 VCC + 0.5

VIL Input LOW Voltage 2.2 < VCC < 2.7 –0.3 0.6 V

2.7 < VCC < 3.6 –0.3 0.8

4.5 < VCC < 5.5 –0.5 0.8

IIX Input Leakage Current GND <VI< VCC –1 +1 μA

IOZ OutputLeakage Current GND <VO <VCC,Output Disabled –1 +1 μA

ICC VCC Operating Supply

Current f = fmax = 1/tRC VCC = VCCmax

IOUT = 0 mA,

CMOS levels

18 25 mA

f = 1 MHz 1.8 3

ISB1 Automatic CE Power

down Current — CMOS

Inputs

CE > VCC − 0.2V, VIN >VCC – 0.2V or VIN <0.2V,

f = fmax (Address and Data Only),

f = 0 (OE, BHE, BLE and WE), VCC = VCC(max)

28μA

ISB2 Automatic CE Power

down Current — CMOS

Inputs

CE > VCC – 0.2V, VIN > VCC – 0.2V or VIN < 0.2V,

f = 0, VCC = VCC(max)

28μA

Notes

3. VIL(min) = –2.0V for pulse durations less than 20 ns.

4. VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.

5. Full Device AC operation assumes a 100 μs ramp time from 0 to VCC (min) and 200 μs wait time after VCC stabilization.

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CY62157ESL MoBL®

Document #: 001-43141 Rev. ** Page 4 of 12

Capacitance

Tested initially and after any design or process changes that may affect these parameters.

Parameter Description Test Conditions Max Unit

CIN Input Capacitance TA= 25°C, f = 1 MHz, VCC = VCC(typ) 10 pF

COUT Output Capacitance 10 pF

Thermal Resistance

Tested initially and after any design or process changes that may affect these parameters.

Parameter Description Test Conditions TSOP II Unit

ΘJA Thermal Resistance

(Junction to Ambient) Still Air, soldered on a 3 × 4.5 inch, two-layer

printed circuit board 77 °C/W

ΘJC Thermal Resistance

(Junction to Case) 13 °C/W

AC Test Loads and Waveforms

Parameters 2.5V 3.0V 5.0V Unit

R1 16667 1103 1800 Ω

R2 15385 1554 990 Ω

RTH 8000 645 639 Ω

VTH 1.20 1.75 1.77 V

VCCVCC

OUTPUT

30 pF

INCLUDING

JIG AND

SCOPE

GND 90%

10% 90%

10%

Rise Time = 1 V/ns Fall Time = 1 V/ns

OUTPUT V

Equivalent to: THÉVENIN EQUIVALENT

ALL INPUT PULSES

RTH

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CY62157ESL MoBL®

Document #: 001-43141 Rev. ** Page 5 of 12

Data Retention Characteristics

Over the Operating Range

Parameter Description Conditions Min Typ[2] Max Unit

VDR VCC for Data Retention 1.5 V

ICCDR Data Retention Current CE > VCC – 0.2V,

VIN > VCC – 0.2V or VIN < 0.2V VCC = 1.5V 2 5 μA

VCC = 2.0V 2 8

tCDR [6] Chip Deselect to Data

Retention Time 0ns

tR [7] Operation Recovery Time tRC ns

Data Retention Waveform

Notes

6. Tested initially and after any design or process changes that may affect these parameters.

7. Full device operation requires linear VCC ramp from VDR to VCC(min) > 100 μs or stable at VCC(min) >100 μs.

8. BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling chip enable signals or by disabling both BHE and BLE.

VCC(min)

tCDR

VDR >1.5V

DATA RETENTION MODE

VCC

CE or

BHE.BLE[8]

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CY62157ESL MoBL®

Document #: 001-43141 Rev. ** Page 6 of 12

Switching Characteristics

Over the Operating Range [9]

Parameter Description 45 ns Unit

Min Max

Read Cycle

tRC Read Cycle Time 45 ns

tAA Address to Data Valid 45 ns

tOHA Data Hold from Address Change 10 ns

tACE CE LOW to Data Valid 45 ns

tDOE OE LOW to Data Valid 22 ns

tLZOE OE LOW to LOW-Z[10] 5ns

tHZOE OE HIGH to High-Z[10, 11] 18 ns

tLZCE CE LOW to Low-Z[10] 10 ns

tHZCE CE HIGH to High-Z[10, 11] 18 ns

tPU CE LOW to Power Up 0 ns

tPD CE HIGH to Power Down 45 ns

tDBE BLE/BHE LOW to Data Valid 45 ns

tLZBE BLE/BHE LOW to Low-Z[10, 12] 5ns

tHZBE BLE/BHE HIGH to HIGH-Z[10, 11] 18 ns

Write Cycle[13]

tWC Write Cycle Time 45 ns

tSCE CE LOW to Write End 35 ns

tAW Address Setup to Write End 35 ns

tHA Address Hold from Write End 0 ns

tSA Address Setup to Write Start 0 ns

tPWE WE Pulse Width 35 ns

tBW BLE/BHE LOW to Write End 35 ns

tSD Data Setup to Write End 25 ns

tHD Data Hold from Write End 0 ns

tHZWE WE LOW to High-Z[10, 11] 18 ns

tLZWE WE HIGH to Low-Z[10] 10 ns

Notes

9. Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to

3V, and output loading of the specified IOL/IOH as shown in the AC Test Loads and Waveforms on page 4.

10.At any temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any device.

11. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high-impedance state.

12.If both byte enables are toggled together, this value is 10 ns.

13.The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE, BLE or both = VIL. All signals must be active to initiate a write and any of these

signals can terminate a write by going inactive. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write.

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CY62157ESL MoBL®

Document #: 001-43141 Rev. ** Page 7 of 12

Switching Waveforms

Figure 2. Read Cycle No.1: Address Transition Controlled. [14, 15]

Figure 3. Read Cycle No. 2: OE Controlled [15, 16]

PREVIOUS DATA VALID DATA VALID

tAA

tOHA

tRC

ADDRESS

DATA OUT

50%

DATA VALID

ACE

LZBE

LZCE

HIGHIMPEDANCE

HZOE

HZCE

HZBE

LZOE

DBE

DOE

IMPEDANCE

HIGH

DATA OUT

SUPPLY

CURRENT

BHE/BLE

ADDRESS

Notes

14.The device is continuously selected. OE, CE = VIL, BHE, BLE, or both = VIL.

15.WE is HIGH for read cycle.

16.Address valid before or similar to CE, BHE, BLE transition LOW.

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CY62157ESL MoBL®

Document #: 001-43141 Rev. ** Page 8 of 12

Figure 4. Write Cycle No 1: WE Controlled [13, 17, 18]

Figure 5. Write Cycle 2: CE Controlled [13, 17, 18]

Switching Waveforms (continued)

tHD

tSD

tPWE

tSA

tHA

tAW

tWC

tHZOE

DATAIN

NOTE 19

tBW

tSCE

DATA IO

ADDRESS

BHE/BLE

tHD

tSD

tPWE

tHA

tAW

tSCE

tWC

tHZOE

DATAIN

tBW

tSA

ADDRESS

DATA IO

BHE/BLE

NOTE 19

Notes

17.Data IO is high impedance if OE = VIH.

18.If CE goes HIGH simultaneously with WE = VIH, the output remains in a high impedance state.

19.During this period, the IOs are in output state. Do not apply input signals.

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CY62157ESL MoBL®

Document #: 001-43141 Rev. ** Page 9 of 12

Figure 6. Write Cycle 3: WE controlled, OE LOW [18]

Figure 7. Write Cycle 4: BHE/BLE Controlled, OE LOW [18]

Switching Waveforms (continued)

DATAIN

tHD

tSD

tLZWE

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZWE

tBW

NOTE 19

ADDRESS

DATA IO

BHE/BLE

tWC

DATA

tSCE

PWE

tHZWE

tLZWE

NOTE 19

DATA IO

ADDRESS

BHE

/BLE

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CY62157ESL MoBL®

Document #: 001-43141 Rev. ** Page 10 of 12

Truth Table

CE WE OE BHE BLE Inputs/Outputs Mode Power

H X X X X High-Z Deselect/Power down Standby (ISB)

X X X H H High-Z Deselect/Power down Standby (ISB)

L H L L L Data Out (IO0–IO15)Read Active(I

CC)

LHLHLDataOut(IO

0–IO7);

IO8–IO15 in High-Z Read Active (ICC)

L H L L H Data Out (IO8–IO15);

IO0–IO7 in High-Z Read Active (ICC)

L H H L L High-Z Output Disabled Active (ICC)

L H H H L High-Z Output Disabled Active (ICC)

L H H L H High-Z Output Disabled Active (ICC)

L L X L L Data In (IO0–IO15) Write Active (ICC)

L L X H L Data In (IO0–IO7);

IO8–IO15 in High-Z Write Active (ICC)

L L X L H Data In (IO8–IO15);

IO0–IO7 in High-Z Write Active (ICC)

Ordering Information

Speed

(ns) Ordering Code Package

Diagram Package Type Operating

Range

45 CY62157ESL-45ZSXI 51-85087 44-pin Thin Small Outline Package Type II (Pb-free) Industrial

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