Philips TDA1015 User manual

DATA SHEET

Product speciﬁcation

File under Integrated Circuits, IC01 November 1982

INTEGRATED CIRCUITS

TDA1015

1 to 4 W audio power amplifier

November 1982 2

Philips Semiconductors Product speciﬁcation

1 to 4 W audio power ampliﬁer TDA1015

The TDA1015 is a monolithic integrated audio amplifier circuit in a 9-lead single in-line (SIL) plastic package. The device

is especially designed for portable radio and recorder applications and delivers up to 4 W in a 4 Ωload impedance. The

very low applicable supply voltage of 3,6 V permits 6 V applications.

Special features are:

•single in-line (SIL) construction for easy mounting

•separated preamplifier and power amplifier

•high output power

•thermal protection

•high input impedance

•low current drain

•limited noise behaviour at radio frequencies

QUICK REFERENCE DATA

PACKAGE OUTLINE

9-lead SIL; plastic (SOT110B); SOT110-1; 1996 August 13.

Supply voltage range VP3,6 to 18 V

Peak output current IOM max. 2,5 A

Output power at dtot= 10%

VP= 12 V; RL= 4 ΩPotyp. 4,2 W

VP= 9 V; RL= 4 ΩPotyp. 2,3 W

VP= 6 V; RL= 4 ΩPotyp. 1,0 W

Total harmonic distortion at Po= 1 W; RL= 4 Ωdtot typ. 0,3 %

Input impedance

preampliﬁer (pin 8) |Zi| > 100 kΩ

power ampliﬁer (pin 6) |Zi| typ. 20 kΩ

Total quiescent current Itot typ. 14 mA

Operating ambient temperature Tamb −25 to + 150 °C

Storage temperature Tstg −55 to + 150 °C

November 1982 3

Philips Semiconductors Product speciﬁcation

1 to 4 W audio power ampliﬁer TDA1015

Fig.1 Circuit diagram.

November 1982 4

Philips Semiconductors Product speciﬁcation

1 to 4 W audio power ampliﬁer TDA1015

RATINGS

Limiting values in accordance with Absolute Maximum System (IEC 134)

HEATSINK DESIGN

Assume VP= 12 V; RL= 4 Ω; Tamb = 45 °C maximum.

The maximum sine-wave dissipation is 1,8 W.

Rth j-a =R

th j-tab +R

th tab-h +R

th h-a = = 58 K/W.

Where Rth j-a of the package is 45 K/W, so no external heatsink is required.

Supply voltage VPmax. 18 V

Peak output current IOM max. 2,5 A

Total power dissipation see derating curve Fig.2

Storage temperature Tstg −55 to + 150 °C

Operating ambient temperature Tamb −25 to + 150 °C

A.C. short-circuit duration of load

during sine-wave drive; VP= 12 V tsc max. 100 hours

Fig.2 Power derating curve.

150 45–

18,

----------------------

November 1982 5

Philips Semiconductors Product speciﬁcation

1 to 4 W audio power ampliﬁer TDA1015

D.C. CHARACTERISTICS

A.C. CHARACTERISTICS

Tamb = 25 °C; VP= 12 V; RL= 4 Ω; f = 1 kHz unless otherwise speciﬁed; see also Fig.3.

Supply voltage range VP3,6 to 18 V

Repetitive peak output current IORM <2A

Total quiescent current at VP= 12 V Itot typ. 14 mA

<25mA

A.F. output power at dtot = 10% (note 1)

with bootstrap:

VP= 12 V; RL= 4 ΩPotyp. 4,2 W

VP= 9 V; RL= 4 ΩPotyp. 2,3 W

VP= 6 V; RL= 4 ΩPotyp. 1,0 W

without bootstrap:

VP= 12 V; RL= 4 ΩPotyp. 3,0 W

Voltage gain:

preampliﬁer (note 2) Gv1 typ. 23 dB

power ampliﬁer Gv2 typ. 29 dB

total ampliﬁer Gv tot typ. 52 dB

49 to 55 dB

Total harmonic distortion at Po= 1,5 W dtot typ. 0,3 %

< 1,0 %

Frequency response; −3 dB (note 3) B 60 Hz to 15 kHz

Input impedance:

preampliﬁer (note 4) |Zi1|> 100 kΩ

typ. 200 kΩ

power ampliﬁer |Zi2| typ. 20 kΩ

Output impedance preampliﬁer |Zo1| typ. 1 kΩ

Output voltage preampliﬁer (r.m.s. value); dtot < 1% (note 2) Vo(rms) typ. 0,8 V

Noise output voltage (r.m.s. value; note 5)

RS= 0 ΩVn(rms) typ. 0,2 mV

RS= 10 kΩVn(rms) typ. 0,5 mV

Noise output voltage at f = 500 kHz (r.m.s. value); B = 5 kHz; RS= 0 ΩVn(rms) typ. 8 µV

Ripple rejection (note 6); f = 100 Hz RR typ. 38 dB

November 1982 6

Philips Semiconductors Product speciﬁcation

1 to 4 W audio power ampliﬁer TDA1015

Notes

1. Measured with an ideal coupling capacitor to the speaker load.

2. Measured with a load resistor of 20 kΩ.

3. Measured at Po= 1 W; the frequency response is mainly determined by C1 and C3 for the low frequencies and by

C4 for the high frequencies.

4. Independent of load impedance of preamplifier.

5. Unweighted r.m.s. noise voltage measured at a bandwidth of 60 Hz to 15 kHz (12 dB/octave).

6. Ripple rejection measured with a source impedance between 0 and 2 kΩ(maximum ripple amplitude: 2 V).

7. The tab must be electrically floating or connected to the substrate (pin 9).

Fig.3 Test circuit.

November 1982 7

Philips Semiconductors Product speciﬁcation

1 to 4 W audio power ampliﬁer TDA1015

APPLICATION INFORMATION

Fig.4 Circuit diagram of a 1 to 4 W amplifier.

Fig.5 Total quiescent current as a function of supply voltage.

November 1982 8

Philips Semiconductors Product speciﬁcation

1 to 4 W audio power ampliﬁer TDA1015

Fig.6 Total harmonic distortion as a function of output power across RL; with bootstrap; −−−without

bootstrap; f = 1 kHz; typical values. The available output power is 5% higher when measured at pin 2

(due to series resistance of C10).

Fig.7 Output power across RLas a function of supply voltage with bootstrap; dtot = 10%; typical values.

The available output power is 5% higher when measured at pin 2 (due to series resistance of C10).

November 1982 9

Philips Semiconductors Product speciﬁcation

1 to 4 W audio power ampliﬁer TDA1015

Fig.8 Voltage gain as a function of frequency; Porelative to 0 dB = 1 W; VP= 12 V; RL=4Ω.

Fig.9 Total harmonic distortion as a function of frequency; P = 1 W; VP= 12 V; RL=4Ω.

November 1982 10

Philips Semiconductors Product speciﬁcation

1 to 4 W audio power ampliﬁer TDA1015

Fig.10 Ripple rejection as a function of R2 (see Fig.4); RS= 0; typical values.

Fig.11 Noise output voltage as a function of R2 (see Fig.4); measured according to A-curve; capacitor C5 is

adapted for obtaining a constant bandwidth.

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