Philips BGY148A User manual
DATA SHEET
Product specification
Supersedes data of 1997 Jul 14 1998 May 13
DISCRETE SEMICONDUCTORS
BGY148A; BGY148B
HF amplifier modules
b
ook, halfpage
M3D188
1998 May 13 2
Philips Semiconductors Product specification
HF amplifier modules BGY148A; BGY148B
FEATURES
•Single 6 V nominal supply voltage
•3 W output power
•Easy control of output power by DC voltage
•Silicon bipolar technology
•Standby current less than 100 µA.
APPLICATIONS
•Portable communication equipment operating in the
400 to 440 MHz and 430 to 488 MHz frequency ranges
respectively.
DESCRIPTION
The BGY148A and BGY148B are three-stage UHF
amplifier modules in a SOT421A package. Each module
consists of three NPN silicon planar transistor dies
mounted together with matching and bias circuit
components on a metallized ceramic substrate. The
modules produce an output power of 3 W into a load of
50 Ωwith an RF drive power of 10 mW.
PINNING - SOT421A
PIN DESCRIPTION
1 RF input
2V
C
3V
S
4 RF output
Flange ground
Fig.1 Simplified outline (SOT421A).
handbook, halfpage
MSA483
12 34
Top view
QUICK REFERENCE DATA
RF performance at Tmb =25°C.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. In order to control the mounting-base temperature, proper heatsinking of the underside of the device is required.
It is therefore advisable that the device is mounted on a printed-circuit board with metallized through holes.
TYPE MODE OF
OPERATION f
(MHz) VS
(V) PL
(W) Gp
(dB) η
(%) ZS; ZL
(Ω)
BGY148A CW 400 to 440 6 ≥3≥24.8 typ. 53 50
BGY148B CW 430 to 488 6 ≥3≥24.8 typ. 53 50
SYMBOL PARAMETER MIN. MAX. UNIT
VSDC supply voltage −8.5 V
VCDC control voltage −4V
P
Dinput drive power −20 mW
PLload power −3.5 W
Tstg storage temperature −40 +100 °C
Tmb operating mounting-base temperature; note1 −30 +100 °C
1998 May 13 3
Philips Semiconductors Product specification
HF amplifier modules BGY148A; BGY148B
CHARACTERISTICS
ZS=Z
L=50Ω;P
D= 10 mW; VS= 6 V; VC≤3.5 V; Tmb =25°C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
f frequency range
BGY148A 400 −440 MHz
BGY148B 430 −488 MHz
IQtotal quiescent current VC= 0; PD=0 −−100 µA
ICcontrol current adjust VCfor PL=3W −−500 µA
PLload power 3 −−W
G
ppower gain adjust VCfor PL= 3 W 24.8 −−dB
ηefficiency adjust VCfor PL=3W 46 53 −%
H
2second harmonic adjust VCfor PL=3W −−−38 dBc
H3third harmonic adjust VCfor PL=3W −−−38 dBc
VSWRin input VSWR adjust VCfor PL=3W −−3:1
control range VC= 0 to 3.5 V 10 −−dB
stability PD= 5 to 20 mW; VS= 5 to 8.5 V;
PL≤3.5 W;
VSWR ≤4 : 1 through all phases
−−−60 dBc
ruggedness VS= 8.5 V; adjust VCfor PL= 3.5 W;
VSWR ≤4 : 1 through all phases no degradation
Fig.2 Load power derating curves.
VS= 8.5 V.
handbook, halfpage
0 100
5
0
1
2
3
4
PL
(W)
Tmb (oC)
20 40 60 80
MDA207
VSWR = 3:1
VSWR = 1:1
1998 May 13 4
Philips Semiconductors Product specification
HF amplifier modules BGY148A; BGY148B
Fig.3 Load power as a function of control voltage;
BGY148A; typical values.
ZS=Z
L=50Ω; PD= 10 mW; VS= 6 V; Tmb =25°C.
handbook, halfpage
01
P
L
(W)
43
5
0
4
MGD553
2VC (V)
3
2
1
400 MHz
440 MHz
Fig.4 Efficiency as a function of load power;
BGY148A; typical values.
ZS=Z
L=50Ω; PD= 10 mW; VS= 6 V; Tmb =25°C.
handbook, halfpage
0
60
40
20
012 P
L
(W) 43
MGD554
η
(%) 440 MHz400 MHz
Fig.5 Loadpowerasafunctionoffrequency;
BGY148A; typical values.
ZS=Z
L=50Ω; PD= 10 mW; VS= 6 V; VC= 3.5 V; Tmb =25°C.
handbook, halfpage
380 400
PL
(W)
460440
5
0
4
MGD555
420 f (MHz)
3
2
1
Fig.6 Efficiencyasafunctionoffrequency;
BGY148A; typical values.
ZS=Z
L=50Ω; PD= 10 mW; VS= 6 V; PL= 3 W; Tmb =25°C.
handbook, halfpage
380
60
40
20
0400 420 f (MHz) 460440
MGD556
η
(%)
1998 May 13 5
Philips Semiconductors Product specification
HF amplifier modules BGY148A; BGY148B
Fig.7 Control voltage and input VSWR as functions
of frequency; BGY148A; typical values.
ZS=Z
L=50Ω; PD= 10 mW; VS= 6 V; PL= 3 W; Tmb =25°C.
handbook, halfpage
4
VC
(V) VSWRin
3.0
2.5
2.0
1.5
1.0
460440 f (MHz)
400380
3
2
1
0
MGD557
420
VSWRin
VC
Fig.8 Harmonics as a function of frequency;
BGY148A; typical values.
ZS=Z
L=50Ω; PD= 2 mW; VS= 4.8 V; PL= 3 W; Tmb =25°C.
−30
−40
−60
−50
380 400 420 440 f (MHz)
MGD558
460
H2, H3
(dBc)
H3
H2
Fig.9 Load power as a function of mounting base
temperature; BGY148A; typical values.
ZS=Z
L=50Ω; PD= 2 mW; VS= 4.8 V; Tmb =25°C.
handbook, halfpage
−25 100
5
0
1
2
3
4
PL
(W)
Tmb (oC)
0255075
MDA206
400 MHz
440 MHz
1998 May 13 6
Philips Semiconductors Product specification
HF amplifier modules BGY148A; BGY148B
Fig.10 Load power as a function of control voltage;
BGY148B; typical values.
ZS=Z
L=50Ω; PD= 10 mW; VS= 6 V; Tmb =25°C.
handbook, halfpage
01
P
L
(W)
43
5
0
4
MGD559
2VC (V)
3
2
1
430 MHz
488 MHz
Fig.11 Efficiency as a function of load power;
BGY148B; typical values.
ZS=Z
L=50Ω; PD= 10 mW; VS= 6 V; Tmb =25°C.
handbook, halfpage
0
60
40
20
012 P
L
(W) 43
MGD560
η
(%)
430 MHz
488 MHz
Fig.12 Load power as a function of frequency;
BGY148B; typical values.
ZS=Z
L=50Ω; PD= 10 mW; VS= 6 V; VC= 3.5 V; Tmb =25°C.
handbook, halfpage
420 440
PL
(W)
500480
5
0
4
MGD561
460 f (MHz)
3
2
1
Fig.13 Efficiency as a function of frequency;
BGY148B; typical values.
ZS=Z
L=50Ω; PD= 10 mW; VS= 6 V; PL= 3 W; Tmb =25°C.
handbook, halfpage
420
60
40
20
0440 460 f (MHz) 500480
MGD562
η
(%)
1998 May 13 7
Philips Semiconductors Product specification
HF amplifier modules BGY148A; BGY148B
Fig.14 ControlvoltageandinputVSWRasfunctions
of frequency; BGY148B; typical values.
ZS=Z
L=50Ω; PD= 10 mW; VS= 6 V; PL= 3 W; Tmb =25°C.
handbook, halfpage
4
VC
(V) VSWRin
3.0
2.5
2.0
1.5
1.0
500480 f (MHz)
440420
3
2
1
0
MGD563
460
VSWRin
VC
Fig.15 Harmonicsas afunction offrequency;
BGY148B; typical values.
ZS=Z
L=50Ω; PD= 2 mW; VS= 4.8 V; PL= 3 W; Tmb =25°C.
−30
−40
−70
−60
−50
420 440 460 480 f (MHz)
MGD564
500
H2, H3
(dBc)
H3
H2
Fig.16 Load power as a function of mounting base
temperature; BGY148B; typical values.
ZS=Z
L=50Ω; PD= 2 mW; VS= 4.8 V; Tmb =25°C.
handbook, halfpage
−25 100
5
0
1
2
3
4
PL
(W)
Tmb (oC)
0255075
MDA205
430 MHz
488 MHz
1998 May 13 8
Philips Semiconductors Product specification
HF amplifier modules BGY148A; BGY148B
SOLDERING
The indicated temperatures are those at the solder
interfaces.
Advised solder types are types with a liquidus less than or
equal to 210 °C.
Solder dots or solder prints must be large enough to wet
the contact areas.
Soldering can be carried out using a conveyor oven, a hot
airoven, an infraredovenor a combinationofthese ovens.
A double reflow process is permitted.
Hand soldering must be avoided because the soldering
irontipcan exceed the maximumpermittedtemperatureof
250 °C and damage the module.
The maximum allowed temperature is 250 °C for
5 seconds.
The maximum ramp-up is 10 °C per second.
The maximum cool-down is 5 °C per second.
Cleaning
The following fluids may be used for cleaning:
•Alcohol
•Bio-Act (Terpene Hydrocarbon)
•Acetone.
Ultrasonic cleaning should not be used since this can
cause serious damage to the product.
Fig.17 Recommended reflow temperature profile.
handbook, halfpage
0
300
200
100
015234
MGM159
t (min)
T
(°C)
1998 May 13 9
Philips Semiconductors Product specification
HF amplifier modules BGY148A; BGY148B
Dimensions in mm.
Fig.18 SOT421A footprint.
handbook, full pagewidth
MGK391
8.45
0.6 2.7
22.6
2
2.4
1
2.6
0.4
0.8
7.48
15.1
20.18
DETAIL
2
0.1
0.1
2.7
1.5
1.7
0.5
0.7
1.1
1.1
2.9
DETAIL
footprint metallization
solder area.
handbook, full pagewidth
MGK392
7.05
3.2
21.8
2
2
1.7
1.8
2
0.8
7.08
14.7
19.78
2
solder area.
1998 May 13 10
Philips Semiconductors Product specification
HF amplifier modules BGY148A; BGY148B
PACKAGE OUTLINE
UNIT cDdEe
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 5.08 7.62
0.56
0.46
3.0
2.6 0.30
0.20 22.1
21.7 2.4
2.0 13.4
13.0 0.7
0.3 0.25 0.15
bA
DIMENSIONS (mm are the original dimensions)
SOT421A 97-06-20
0 5 10 mm
scale
L
22.4
22.0
U
8.2
7.8
U1
3.4
3.0
Q
0.25
0.05
Z
wye
1
Ceramic single-ended flat package; 4 in-line leads SOT421A
e e
U
U1
D
Z
E
e1
c
A
12 34
b
d
w
M
LQ
y
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